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MetalKeen fabricates custom stainless steel welded chambers for semiconductor manufacturing equipment, including CVD, PVD, plasma etch, and ALD process chambers. Manufactured from 316L stainless steel with precision TIG welding, internal electropolishing, and helium leak testing, our vacuum chambers deliver ultra-high vacuum (UHV) compatibility, particle-free surfaces, and thermal stability for sub-micron wafer processing.
A semiconductor process chamber (also called a vacuum chamber, reactor vessel, or process module) is the core enclosure where thin-film deposition, etching, or thermal processing occurs on silicon wafers. These chambers must maintain:
Ultra-high vacuum (UHV) integrity — Base pressure typically 10⁻⁶ to 10⁻⁹ Torr
Extreme cleanliness — Particle counts < 0.1 μm per cubic foot (Class 1–10)
Chemical resistance — Withstands halogens (Cl₂, BCl₃, NF₃), corrosive plasmas, and thermal cycling
Dimensional stability — Maintains alignment of electrodes, showerheads, and wafer stages under thermal load
MetalKeen produces custom-welded 316L stainless steel chambers from your 3D CAD models, OEM drawings, or reverse-engineered samples, with full vacuum certification and material traceability.
Table
Material | Grade | Application | Surface Finish |
|---|---|---|---|
316L Stainless Steel | S31603 / 1.4404 | Standard for CVD, PVD, etch, and ALD chambers | Internal EP Ra ≤ 0.4 μm; external MF |
316LN Stainless Steel | S31653 | UHV and low-magnetic applications (ion implant, e-beam) | Internal EP Ra ≤ 0.25 μm |
304L Stainless Steel | S30403 | Non-corrosive ambient chambers; cost-sensitive tools | Mechanically polished Ra ≤ 0.8 μm |
904L Stainless Steel | N08904 | Aggressive halogen etch chemistries; high chloride | Internal EP Ra ≤ 0.25 μm |
Why 316L for Semiconductor Chambers?
Ultra-low carbon (≤0.03%) — Eliminates chromium carbide precipitation and intergranular corrosion at welds
Molybdenum addition (2–3%) — Superior pitting resistance against halogen-based process chemistries
Non-magnetic — Critical for ion implant, e-beam lithography, and magnetic field-sensitive processes
Excellent EP response — Achieves mirror-smooth, chromium-enriched surfaces for minimal outgassing
Table
Chamber Type | Process | Key Design Features |
|---|---|---|
CVD Chamber — Chemical Vapor Deposition | Dielectric and metal film deposition | Heated walls; showerhead electrode mount; gas distribution plenum |
PVD Chamber — Physical Vapor Deposition | Sputtering, evaporation | Magnetron cathode interface; shielding; substrate heater mount |
Plasma Etch Chamber — ICP, RIE, DRIE | Dielectric and metal etching | RF electrode integration; liner shield; turbopump port |
ALD Chamber — Atomic Layer Deposition | Ultra-thin conformal films | Rapid thermal cycling design; precursor delivery manifold |
Load Lock Chamber — Wafer transfer | Vacuum isolation between atmosphere and process | Small volume; fast pump-down; O-ring or metal seal door |
Transfer Chamber — Central wafer handler | Multi-tool cluster connection | Multiple radial ports; robotic arm clearance; low particle generation |
Anneal / RTP Chamber — Rapid Thermal Processing | High-temperature dopant activation | Quartz or SS liner; lamp heating window; thermal uniformity |
Table
Specification | Details |
|---|---|
Chamber Diameter | 200 mm – 1500 mm (8" – 60"); custom sizes available |
Chamber Height / Depth | 100 mm – 1200 mm |
Wall Thickness | 6 mm – 25 mm (depending on vacuum rating and thermal load) |
Material Form | Rolled and welded cylinder from plate; or machined from forged ring |
Welding Process — Longitudinal & circumferential | TIG (GTAW) with 316L filler; orbital welding for small ports |
Welding Process — Critical joints | Electron Beam Welding (EBW) for UHV; eliminates virtual leaks |
Internal Surface Finish — Standard HV | Electropolished Ra ≤ 0.4 μm |
Internal Surface Finish — UHV | Electropolished Ra ≤ 0.25 μm + vacuum bakeout |
External Surface Finish | Mechanically polished Ra ≤ 0.8 μm; or bead blasted |
Leak Rate | ≤ 1×10⁻⁹ Pa·m³/s (HV); ≤ 1×10⁻¹⁰ Pa·m³/s (UHV) |
Port Configuration — Custom | Pump ports, viewport ports, gas inlets, RF feedthroughs, thermocouples |
Table
Step | Process | Quality Control |
|---|---|---|
Material Verification — PMI + MTR | XRF/OES spectrometer; heat number traceability | Reject non-conforming material |
Plate Cutting — Laser or plasma | CNC nesting; minimal heat-affected zone | Dimensional check |
Roll Forming — Cylindrical shell | 3-roll or 4-roll plate rolling | Roundness verification; seam gap check |
Longitudinal Welding — TIG | Full-penetration weld with argon backing | 100% RT (radiographic) or UT inspection |
End Cap / Flange Welding — Circumferential | TIG or EBW for UHV applications | PT or RT on all pressure-boundary welds |
Machining — Port holes, seal faces, bolt patterns | CNC vertical mill; boring mill | CMM verification; true position tolerance |
Internal Surface Treatment — Grinding, polishing, EP | Progressive belt polish → mechanical polish → electropolish | Ra profilometer; borescope inspection |
Component Integration — Liners, shields, baffles | Tack and weld internal components | Fit check; clearance verification |
Cleaning — Degreasing, ultrasonic, DI rinse | Semiconductor-grade solvents | Residue testing; particle count |
Leak Testing — Vacuum helium mass spectrometer | All welds, ports, and seals | Certificate per chamber |
Bakeout — Optional for UHV | Vacuum furnace bake at 150–250°C | Outgassing rate verification |
Table
Test | Method | Standard | Purpose |
|---|---|---|---|
PMI (Positive Material Identification) | XRF handheld spectrometer | ASTM E415 | Verify 316L chemistry and heat number |
Dimensional Inspection — CMM | 3D coordinate measurement | ISO 9013 | Verify port positions, concentricity, flatness |
Surface Roughness — Internal | Contact profilometer | ISO 4287 | Confirm EP Ra ≤ 0.4 μm (or ≤ 0.25 μm UHV) |
Radiographic Testing (RT) | X-ray on longitudinal and circumferential welds | ASTM E94 | Detect lack of fusion, porosity, cracks |
Dye Penetrant Testing (PT) | Color contrast or fluorescent PT | ASTM E165 | Detect surface-breaking weld defects |
Helium Leak Test — Mass spectrometer | Vacuum and sniff methods | ASTM E498 / ISO 20485 | Verify ≤ 10⁻⁹ Pa·m³/s (HV); ≤ 10⁻¹⁰ (UHV) |
Pressure Test — Hydrostatic or pneumatic | 1.5× design pressure | ASME BPVC VIII-1 | Structural integrity of pressure boundary |
Outgassing Test — Optional | RGA (Residual Gas Analysis) after bakeout | SEMI standards | Verify H₂O, CO, hydrocarbon levels |
Our custom stainless welded chambers are used in critical wafer processing tools:
Table
Process Tool | Chamber Function | Material / Finish |
|---|---|---|
PECVD / LPCVD System — Dielectric deposition | Main reactor chamber; gas distribution plenum | 316L EP; heated wall design |
Sputtering / PVD System — Metal deposition | Process chamber; shield kit housing | 316L EP; replaceable liner mounts |
ICP Etcher — Dielectric and metal etch | Plasma chamber; RF electrode base; liner shield | 316L or 904L EP; high halogen resistance |
ALD Reactor — Conformal thin film | Reaction chamber; precursor manifold; heater block | 316L EP; rapid thermal cycling |
Ion Implanter — Dopant implantation | Source chamber; beam line chamber; process chamber | 316LN EP; low magnetic permeability |
RTP / Annealer — High-temperature anneal | Process chamber; lamp housing; quartz window mount | 316L; thermal expansion management |
Wafer Transfer / Load Lock — Vacuum isolation | Transfer chamber; load lock; buffer chamber | 316L EP; fast pump-down design |
✅ Semiconductor-Grade 316L — PMI-verified with full MTR traceability
✅ UHV Welding Expertise — TIG and electron beam welding for leak-free chambers
✅ Internal Electropolishing — Ra ≤ 0.4 μm standard; Ra ≤ 0.25 μm for UHV
✅ Helium Leak Certified — Every chamber tested to 10⁻⁹ Pa·m³/s or better
✅ Precision Machining — CNC porting and seal face machining to ±0.02 mm
✅ Custom Engineering — Designed to your 3D models, OEM specs, or reverse-engineered samples
✅ Cleanroom Packaging — Nitrogen-purged, double-bagged for cleanroom entry
Q1: Why is 316L stainless steel the standard material for semiconductor vacuum chambers? 316L stainless steel is the industry standard because its ultra-low carbon content prevents weld decay and intergranular corrosion, its 2–3% molybdenum provides superior resistance to halogen-based etch chemistries (Cl₂, BCl₃, NF₃), and it is non-magnetic—critical for ion implant and electron beam systems. Additionally, 316L responds excellently to electropolishing, achieving the ultra-smooth, low-outgassing surfaces required for high and ultra-high vacuum.
Q2: What is the difference between a CVD chamber and a PVD chamber in terms of fabrication? CVD chambers typically require heated walls (200–600°C) with integrated thermal management, gas showerhead mounting, and precursor delivery manifolds. Wall thickness and thermal expansion must be carefully managed. PVD chambers prioritize magnetron cathode integration, sputter shield mounting, and substrate heater interfaces. PVD chambers often use removable liner shields to protect the main chamber from coating buildup. MetalKeen fabricates both types with process-specific porting and internal features.
Q3: How do you ensure a semiconductor chamber is leak-tight? We ensure leak integrity through three layers of control: (1) Premium 316L material with verified chemistry; (2) Precision welding — full-penetration TIG welds with argon backing, plus electron beam welding for UHV joints; (3) 100% helium leak testing using mass spectrometry on every weld, port, and seal surface. Standard chambers are certified to ≤ 1×10⁻⁹ Pa·m³/s; UHV chambers to ≤ 1×10⁻¹⁰ Pa·m³/s.
Q4: What is internal electropolishing, and why is it critical for semiconductor chambers? Electropolishing is an electrolytic surface treatment that removes a controlled layer of metal, producing a microscopically smooth, chromium-enriched surface with Ra ≤ 0.4 μm. For semiconductor chambers, this is critical because it reduces outgassing by an order of magnitude, eliminates virtual leaks from surface pores, improves corrosion resistance against process chemistries, and prevents particle generation that could contaminate wafers.
Q5: Can you fabricate chambers from our 3D CAD models or reverse-engineer from existing chambers? Yes. We accept 3D CAD files (STEP, IGES, SolidWorks, CATIA) and 2D manufacturing drawings for custom chamber fabrication. We also offer reverse engineering from existing chambers or damaged components, using 3D laser scanning and CMM measurement to recreate accurate fabrication drawings. DFM feedback is provided to optimize weld access and machining sequences.
Q6: What port configurations and fittings can you integrate into the chamber? We machine and weld pump ports (ISO-K, CF, KF), gas inlet ports (VCR, Swagelok, welded tube stubs), viewport ports (CF or KF with fused silica windows), RF feedthrough ports, thermocouple ports, and custom manifold blocks. All ports are positioned per your tool layout with true-position tolerances of ±0.05 mm relative to the chamber centerline.
Q7: What is the typical lead time for a custom semiconductor vacuum chamber? Standard lead time for a prototype or single chamber is 8–12 weeks, depending on size, complexity, and surface finish requirements. Volume production of identical chambers typically runs 10–14 weeks including fixture development. UHV chambers with extensive EB welding and ultra-fine EP may require 12–16 weeks. Expedited schedules are available for tool refurbishment projects.
